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Quiz: EDC-Basics of IC bipolar , MOS & CMOS types

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Number of Questions: 20

Question: 16 -

For a n channel JFET rd = 10 kΩ at Vgs = 0 V & Vp = -6 V then the value of rd at Vgs = -2V is

Options:

  1. 45 kΩ

  2. 5 kΩ

  3. 22.5 kΩ

  4. 10 kΩ

    5. Answer:

    22.5 kΩ
    Solution not available.

Question: 17 -

Photo ethching is a process of

Options:

  1. Selective removal of layer

  2. Diffusion of impurities

  3. Removal of photo resist

  4. Make dicing marks

    5. Answer:

    Selective removal of layer
    Solution not available.

Question: 18 -

A one-sided abrupt junction has 1021/m3 of dopants on the lightly doped side , zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction (taking q=1.6 10 -19 C ,Es = 16 and E0 = 8.875 *10-12 F/m ) is , 

Options:

  1. 1.5 mm

  2. 0.6 µm

  3. 0.036 nm

  4. 3 µm

    5. Answer:

    0.6 µm
    Solution not available.

Question: 19 -

The substrate in a monolithic circuit must be connected to

Options:

  1. Supply

  2. Most positive voltage for P type substrate

  3. Ground

  4. Most negative voltage for P type substrate

    5. Answer:

    Most negative voltage for P type substrate
    Solution not available.

Question: 20 -

High threshold MOSFET can be obtained by using Si crystal orientation

Options:

  1. <110>

  2. <101>

  3. <100>

  4. <111>

    5. Answer:

    <110>
    Solution not available.