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Quiz: EDC-Transistor Theory (BJT , FET)

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Number of Questions: 20

Question: 11 -

The pinch off voltage for a n-channel JFET is 4 V , when Vgs = 1 V , the pinch off occurs for Vds equal to :

Options:

  1. 3 V

  2. 5 V

  3. 4 V

  4. 1 V

    5. Answer:

    3 V
    Solution not available.

Question: 12 -

The leakage current of a transistor are Icbo = 5 μA and Iceo = 0.4 mA and Ib = 30 μA . The value of β is 

Options:

  1. None of these

  2. 80

  3. 79

  4. 81

    5. Answer:

    79
    Solution not available.

Question: 13 -

Silicon dioxide is used in integrated circuits

Options:

  1. Because of its high heat conduction

  2. To control the location of diffusion and to protect and insulate the silicon surface

  3. Because its facilitates the penetration of diffusants

  4. To control the concentration of diffusants

    5. Answer:

    To control the location of diffusion and to protect and insulate the silicon surface
    Solution not available.

Question: 14 -

The threshold voltage of an n-channel MOSFET can be increased by

Options:

  1. Reducing the channel dopant concentration

  2. Reducing the Gate oxide thickness

  3. Reducing the channel length

  4. Increasing the channel dopant concentration

    5. Answer:

    Reducing the Gate oxide thickness
    Solution not available.

Question: 15 -

A P+ n silicon diode is forward biased at a current of 1 mA . The Hole life time in n- region is 0.1 μs . Neglecting the depletion coefficient the diode impedance at 1 MHz is 

Options:

  1. 23.5 + j 7.5 ohm

  2. 38.7 - j 12.1 ohm

  3. 23.67 - j 7.34 ohm

  4. 38.7 + j 12.1 ohm

    5. Answer:

    23.67 - j 7.34 ohm
    Solution not available.