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Quiz: EDC-PN Junction Theory

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Number of Questions: 20

Question: 6 -

Why does the mobility of electrons in a semiconductor decrease with increasing donor density ?

Options:

  1. Electrons are trapped by the donors

  2. Doping increases the effective mass of electrons

  3. More holes are generated so that the effective mobility decreases

  4. Doping decreases the relaxation time of electrons

    5. Answer:

    Doping decreases the relaxation time of electrons
    Solution:

    Doping decreases relaxation time of electron , so mobility decreases

Question: 7 -

A combination of two diodes connected in parallel when compared to a single diode can withstand

Options:

  1. A large leakage current

  2. Twice the value of maximum forward current

  3. Twice the value of cut-in voltage

  4. Twice the value of peak inverse voltage

    5. Answer:

    Twice the value of maximum forward current
    Solution:

    When two diodes connected in parallel , they can with stand twice the value of max forward current compared to single diode

Question: 8 -

The voltage at which the current in p-n junction Germanium diode reach 90% of its reverse saturation value at room temperature

Options:

  1. -0.06V

  2. 0.06 V

  3. 0.08 V

  4. -0.08 V

    5. Answer:

    -0.06V
    Solution not available.

Question: 9 -

The diffusion capacitance of a p - n junction diode

Options:

  1. Decreases exponentially with forward bias voltage

  2. Increases exponentially with forward bias voltage

  3. Increase linearly with forward bias voltage

  4. Decrease linearly with forward bias voltage

    5. Answer:

    Increases exponentially with forward bias voltage
    Solution not available.

Question: 10 -

For an ideal diode operating in forward bias , change in diode voltage required for a 10 times increase diode current is

Options:

  1. 52.6 mV

  2. 50 mV

  3. 62.10 mV

  4. 83 mV

    5. Answer:

    52.6 mV
    Solution not available.