Question: 16 -

The switching speed of P+ N junction (having a heavily doped P region) depends primarily on :-

The mobility of minority carriers in the P+ region

The lifetime of minority carriers in the P+ region

The mobility of majority carriers in the N region 

The lifetime of majority carriers in the N region

Answer:

The lifetime of majority carriers in the N region

Solution:

The switching speed of a P+ N junction depends on the lifetime of majority carriers in the N-region

Question: 17 -

The diffusion capacitance of a p-n junction :-

Increases with increasing current and increasing temperature

Decreases with decreasing current and increasing temperature

Does not depend on current and temperature

Decreasing with increasing current and increasing temperature

Answer:

Decreases with decreasing current and increasing temperature

Solution not available.

Question: 18 -

In a zener diode ,

Only the N region is heavily doped

Both P and N regions are lightly doped

Only the P region is heavily doped

Both P and N regions are heavily doped

Answer:

Both P and N regions are heavily doped

Solution:

The doping concentration in both sides increases uniformly

Question: 19 -

The small signal capacitance of an abrupt P⁺ n junction is 1 nF/cm² at zero bias . If the built-in voltage is 1 volt , the capacitance at a reverse bias voltage of 99 volts in

0.1

10

100

0.01

Answer:

0.1

Solution not available.

Question: 20 -

In a uniformly doped abrupt p-n junction the doping level of the n-side is four times the doping level of the p-side the ratio of the depletion layer width of n-side verses p-side is

0.5

1

0.25

2

Answer:

0.25

Solution not available.