Question: 6 -
Consider a semiconductor bar having square cross-section . Assume that holes drift in the positive X-direction and a magnetic field is applied in the positive Z-direction perpendicular to the direction in which holes drift . The sample will show
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a magnetic field in positive Y-direction
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a negative resistance in positive Y-direction
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a negative voltage in positive Y-direction
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a positive voltage in positive Y-direction.
Answer:
a negative voltage in positive Y-direction
Solution:
Holes will be forced towards negative y-direction . So a negative voltage in positive y-direction.
Holes will be forced towards negative y-direction . So a negative voltage in positive y-direction.
Question: 7 -
when a semiconductor bar is heated at one end , a voltage across the bar is developed . If the heated end is positive , the semiconductor is
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p-type
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n-type
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intrinsic
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Highly degenerate
Answer:
n-type
Solution:
The heated end becomes positive , it means injected minority carrier due to heat are holes . So the bar is of n-type.
The heated end becomes positive , it means injected minority carrier due to heat are holes . So the bar is of n-type.
Question: 8 -
Consider a Si sample under equilibrium condition , doped with boron concentration of 1017/cm3 . At T=300K , is this material n-type or p-type? What are the majority and minority carrier concentrations ?
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n-type; n=1017/cm3 , p=103/cm3
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p-type; p=1017/cm3 , n=103/cm3
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n-type; n=1017/cm3 , p=1010/cm3
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p-type; p=1017/cm3 , n=1010/cm3
Answer:
p-type; p=1017/cm3 , n=103/cm3
Solution not available.
Question: 9 -
In an extrinsic semiconductor , the Hall coefficient RH
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increases with increase of temperature
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decreases with increase of temperature
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is independent of the change of temperature
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changes with change of magnetic field
Answer:
increases with increase of temperature
Solution:
RH is inversely proportiona; to carrier concentration . As temperature increases electron-hole pair starts generating and these carriers starts dominating impurity carriers , so n reduces and RH increases.
RH is inversely proportiona; to carrier concentration . As temperature increases electron-hole pair starts generating and these carriers starts dominating impurity carriers , so n reduces and RH increases.
Question: 10 -
Which one of the following pairs of semiconductors and current carriers is correctly matched ?
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n - type . . . No. of electrons < No. of holes
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p -type . . . No. of electrons > No. of holes
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Bulk . . . Neither electrons nor holes
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Intrinsic . . . No. of electrons = No. of holes
Answer:
Intrinsic . . . No. of electrons = No. of holes
Solution:
Intrinsic - No. of electrons = No. of holes p-type - No. of electrons < No. of holes n-type - No. of electrons > No. of holes Bulk - Either lightly doped n or p-type
Intrinsic - No. of electrons = No. of holes p-type - No. of electrons < No. of holes n-type - No. of electrons > No. of holes Bulk - Either lightly doped n or p-type