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Quiz: EDC-Semiconductor Theory

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Number of Questions: 20

Question: 11 -

Consider the following statements for an n-type semiconductor:

(i) Donor level ionization decreases with temperature.

(ii) Donor level ionization increases with temperature.

(iii) Donor level ionization is independent of temperature.

(iv) Donor level ionization increases as Ed (donor energy level) moves towards the conduction band at a given temperature.

Options:

  1. only (ii)

  2. only (i)

  3. (ii) and (iv)

  4. only (iii)

    5. Answer:

    (ii) and (iv)
    Solution:

    With temperature ionization of impurity atoms increases . At a given temperature as , Ed moves towards conduction band more impurity atoms ionize.

Question: 12 -

In an extrinsic semiconductor the free electron concentration depends on:

Options:

  1. Effective mass of holes only

  2. Effective mass of electrons only

  3. Width of the forbidden energy band of the semiconductor

  4. Temperature of the semiconductor

    5. Answer:

    Temperature of the semiconductor
    Solution not available.

Question: 13 -

What is the energy band gap ratio of Si to Ge at 300K

Options:

  1. 1.52

  2. 1.77

  3. 1.63

  4. 0.82

    5. Answer:

    1.52
    Solution not available.

Question: 14 -

Consider two energy levels : E1 , E ev above the fermi level and E2 , E ev below the fermi level . P1 and P2 are respectively the probabilities of E1 being occupied by an electron and E2 being empty . Then

Options:

  1. P1 and P2 depend on number of free electrons

  2. P1 < P2

  3. P1 > P2

  4. P1 = P2

    5. Answer:

    P1 < P2
    Solution not available.

Question: 15 -

In a Hall probe device the voltage changed from 4 V to V/4 , then the magnetic field intensity will change from 2B to 

Options:

  1. B/8

  2. B/10

  3. B/4

  4. B/2

    5. Answer:

    B/8
    Solution not available.